 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| e PTB 20081 150 Watts, 470-860 MHz UHF TV Power Transistor Description The 20081 is a class AB, NPN, common emitter RF power transistor intended for 28 to 32 Vdc operation across the 470 to 860 MHz UHF TV frequency band. It is rated at 100 watts minimum output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 150 Watts (P-Sync), 470-860 MHz Class AB Characteristics 55% Collector Efficiency at 100 Watts (CW) Guaranteed Performance at 28 Volts, 860 MHz - Output Power = 125 Watts (Peak Sync) - Output Power = 100 Watts (CW) - Minimum Gain = 8.5 dB Guaranteed Performance at 32 Volts, 860 MHz - Output Power = 150 Watts (Peak Sync) Typical Gain vs. Frequency (as measured in a broadband circuit) 10.0 9.5 Gain (dB) 9.0 8.5 8.0 7.5 7.0 470 200 81 LOT COD E VCC = 28 V ICQ = 2 x 100 mA Pout = 100 W 548 626 704 782 860 Frequency (MHz) Package 20212 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 65 4.0 12 233 1.33 -40 to +150 0.75 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20081 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain Output Capacitance (each side) (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A VCB = 28 V, IE = 0 A, f = 1 MHz Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Cob Min 25 55 3.5 20 -- Typ 30 70 5 50 45 Max -- -- -- 100 -- Units Volts Volts Volts -- pF RF Specifications (100% Tested) Characteristic Power Output (VCC = 28 Vdc, ICQ = 2 x 100 mA, f = 860 MHz) Power Output (P-Sync.) (VCC = 28 Vdc, ICQ = 2 x 100 mA, f = 860 MHz) Power Out (P-Sync.) (VCC = 32 Vdc, ICQ = 2 x 100 mA, f = 860 MHz) Gain (VCC = 28 Vdc, Pout = 100 W, ICQ = 2 x 100 mA, f = 860 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 100 W, ICQ = 2 x 100 mA, f = 860 MHz) Load Mismatch Tolerance (VCC = 28 Vdc, Pout = 100 W(PEP), f = 860 MHz-- all phase angles at frequency of test) Symbol Pout Pout Pout Gpe Min 100 125 150 8.5 55 -- Typ 110 135 160 9.5 58 -- Max -- -- -- -- -- 10:1 Units Watts Watts Watts dB % -- C Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 28 Vdc, Pout = 100 W, ICQ = 2 x 100 mA) Z Source Z Load Z0 = 50 Frequency MHz 470 650 860 R 2.0 3.6 6.0 Z Source jX -3.6 -7.0 -13.5 R 9.8 9.0 4.5 Z Load jX -9.8 -1.3 -5.0 2 e Typical Performance Efficiency vs. Frequency (as measured in a broadband circuit) 62 60 PTB 20081 Intermodulation Distortion vs. Power Output -20 VCC = 28 V -24 ICQ = 2 x 100 mA f1 = 859.95 MHz f2 = 860.05 MHz Efficiency (%) 58 56 54 52 50 470 IMD (dBc) -28 -32 -36 -40 VCC = 28 V ICQ = 2 x 100 mA Pout = 100 W 548 626 704 782 860 20 30 40 50 60 70 80 90 100 110 120 Frequency (MHz) Output Power (Watts-PEP) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1994 EUS/KR 1301-PTB 20081 Uen Rev. D 09-28-98 3 |
Price & Availability of PTB20081
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |